Electronic structure of (001) AlN/GaN quantum wells by means of a sp(3)sd(5) empirical tight-binding Hamiltonian

Abstract

We have studied the electronic band structure of (0 0 1) AIN/GaN quantum wells by means of a sp(3)sd(5) empirical tight-binding Hamiltonian with nearest-neighbor interactions, including spin-orbit coupling and the effects of strain together with the surface Green function matching method. We have analyzed quantum wells with a thickness in the range 2 <= n <= 50, n being the number of principal layers of GaN in the well region. Results are presented for the (Gamma) over bar point and the Gamma K direction of the 2D Brillouin zone. The orbital character and the spatial localization of the different states have been also studied. (c) 2006 Elsevier B.V. All rights reserved.