Numerical simulation of photothermal radiometry signals in silicon single crystals

Abstract

By using the theoretical model proposed by Mandelis et al. and a numerical simulations. We have analysed the generation of photoinduced black body radiation (photothermal radimometry signal) on monocrystalline silicon wafers. We report the particular role of each one of the main parameters involved on the phototermal signal. The parameter values were taken of the reported values for industrial silicon wafers. We show a discuss the obtained results.