Hole states in boron delta-doped diamond

Abstract

Hole states in B delta-doped diamond quantum wells are calculated in the Brillouin zone center within the effective mass approximation using a local density Thomas-Fermi approximation for the description of the band bending profile. The calculation assumes a two-independent (hh+1h) hole bands model, and considers some of the different sets of Luttinger parameters for diamond reported in the literature. The results for the hole energy states allow to propose an indirect way of determining the actual set of valence band parameters: the measurement of optical absorption involving transitions from hole energy states in diamond systems with delta-doping are performed. (C) 2002 Elsevier Science B.V All rights reserved.