Bulk anisotropic excitons in type-II semiconductors built with 1D and 2D low-dimensional structures

Abstract

We used a simple variational approach to account for the difference in the electron and hole effective masses in Wannier-Mott excitons in type-II semiconducting heterostructures in which the electron is constrained in an one-dimensional quantum wire (1DQW) and the hole is in a two-dimensional quantum layer (2DQL) perpendicular to the wire or viceversa. The resulting Schrodinger equation is similar to that of a 3D bulk exciton because the number of free (nonconfined) variables is three

two coming from the 2DQL and one from the 1DQW. In this system the effective electron-hole interaction depends on the confinement potentials.