Ciencias,UNAM

Bulk anisotropic excitons in type-II semiconductors built with 1D and 2D low-dimensional structures

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dc.contributor.author Coyotecatl, HA
dc.contributor.author del Castillo-Mussot, M
dc.contributor.author Reyes, JA
dc.contributor.author Vazquez, GJ
dc.contributor.author Montemayor-Aldrete, JA
dc.contributor.author Reyes-Esqueda, JA
dc.contributor.author Cocoletzi, GH
dc.date.accessioned 2011-01-22T10:26:30Z
dc.date.available 2011-01-22T10:26:30Z
dc.date.issued 2005
dc.identifier.issn 0035-001X
dc.identifier.uri http://hdl.handle.net/11154/1410
dc.description.abstract We used a simple variational approach to account for the difference in the electron and hole effective masses in Wannier-Mott excitons in type-II semiconducting heterostructures in which the electron is constrained in an one-dimensional quantum wire (1DQW) and the hole is in a two-dimensional quantum layer (2DQL) perpendicular to the wire or viceversa. The resulting Schrodinger equation is similar to that of a 3D bulk exciton because the number of free (nonconfined) variables is three en_US
dc.description.abstract two coming from the 2DQL and one from the 1DQW. In this system the effective electron-hole interaction depends on the confinement potentials. en_US
dc.language.iso en en_US
dc.title Bulk anisotropic excitons in type-II semiconductors built with 1D and 2D low-dimensional structures en_US
dc.type Article en_US
dc.identifier.idprometeo 1551
dc.source.novolpages 51(4):387-390
dc.subject.wos Physics, Multidisciplinary
dc.description.index WoS: SCI, SSCI o AHCI
dc.subject.keywords groundstate energy of screened excitons
dc.subject.keywords low-dimensional structures
dc.subject.keywords semiconductors
dc.relation.journal Revista Mexicana De Fisica

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