Experimental and theoretical DOS of Co and Ni silicides

Abstract

A set of samples of Co-Ni silicide thin-films were deposited on Si wafers by PLD and were submitted to thermal-annealing to promote silicidation. Samples were characterized by XPS, including in-depth profiles. Experimental results are complemented with theoretical density of states (DOS). Calculations were performed by means of extended HUM theory approximation. Tendency of DOS behavior of Co and Ni silicides at valence level about similarities/differences between theoretical calculations and experimental results is discussed alongside this work. (C) 2003 Elsevier Science B.V. All rights reserved.