Numerical simulation of photothermal radiometry signals in silicon single crystals

dc.contributor.author	Campos-Canton, I
dc.contributor.author	Ruiz, F
dc.contributor.author	Rodríguez, ME
dc.date.accessioned	2011-01-22T10:26:50Z
dc.date.available	2011-01-22T10:26:50Z
dc.date.issued	2002
dc.identifier.issn	0035-001X
dc.identifier.uri	http://hdl.handle.net/11154/1807
dc.description.abstract	By using the theoretical model proposed by Mandelis et al. and a numerical simulations. We have analysed the generation of photoinduced black body radiation (photothermal radimometry signal) on monocrystalline silicon wafers. We report the particular role of each one of the main parameters involved on the phototermal signal. The parameter values were taken of the reported values for industrial silicon wafers. We show a discuss the obtained results.	en_US
dc.language.iso	es	en_US
dc.title	Numerical simulation of photothermal radiometry signals in silicon single crystals	en_US
dc.type	Article	en_US
dc.identifier.idprometeo	2118
dc.source.novolpages	48(5):397-404
dc.subject.wos	Physics, Multidisciplinary
dc.description.index	WoS: SCI, SSCI o AHCI
dc.subject.keywords	photothermal radimometry
dc.subject.keywords	heat conduction
dc.subject.keywords	phonons
dc.relation.journal	Revista Mexicana De Fisica