dc.contributor.author |
Rivera-Marquez, A |
|
dc.contributor.author |
Rubin-Falfan, M |
|
dc.contributor.author |
Lozada-Morales, R |
|
dc.contributor.author |
Portillo-Moreno, O |
|
dc.contributor.author |
Zelaya-Angel, O |
|
dc.contributor.author |
Luyo-Alvarado, J |
|
dc.contributor.author |
Melendez-Lira, M |
|
dc.contributor.author |
Banos, L |
|
dc.date.accessioned |
2011-01-22T10:27:25Z |
|
dc.date.available |
2011-01-22T10:27:25Z |
|
dc.date.issued |
2001 |
|
dc.identifier.issn |
0031-8965 |
|
dc.identifier.uri |
http://hdl.handle.net/11154/1912 |
|
dc.description.abstract |
Nanocrystalline CdSe films were grown onto glass substrates by the chemical bath method. Different constant deposition temperatures (Td) were employed in the range 4-65 degreesC. Average grain size (GS) increased monotonically with Td, reaching saturation at similar to 65 degreesC. The GS values were in the interval 5-16 nm. At low T-d values (4-15 degreesC) the structural phase was hexagonal wurtzite (W). for intermediate values. a wurtzite and zincblende (ZB) mixture of phases was found, and at high T-d (65 degreesC) only cubic ZB phase was present in the layers. The variation of the bandgap as a result of the structural phase change and quantum confinement is studied. |
en_US |
dc.language.iso |
en |
en_US |
dc.title |
Quantum confinement and crystalline structure of CdSe nanocrystalline films |
en_US |
dc.type |
Article |
en_US |
dc.identifier.idprometeo |
2263 |
|
dc.source.novolpages |
188(3):1059-1064 |
|
dc.subject.wos |
Materials Science, Multidisciplinary |
|
dc.subject.wos |
Physics, Applied |
|
dc.subject.wos |
Physics, Condensed Matter |
|
dc.description.index |
WoS: SCI, SSCI o AHCI |
|
dc.relation.journal |
Physica Status Solidi A-Applications and Materials Science |
|