Quantum confinement and crystalline structure of CdSe nanocrystalline films

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Show simple item record Rivera-Marquez, A Rubin-Falfan, M Lozada-Morales, R Portillo-Moreno, O Zelaya-Angel, O Luyo-Alvarado, J Melendez-Lira, M Banos, L 2011-01-22T10:27:25Z 2011-01-22T10:27:25Z 2001
dc.identifier.issn 0031-8965
dc.description.abstract Nanocrystalline CdSe films were grown onto glass substrates by the chemical bath method. Different constant deposition temperatures (Td) were employed in the range 4-65 degreesC. Average grain size (GS) increased monotonically with Td, reaching saturation at similar to 65 degreesC. The GS values were in the interval 5-16 nm. At low T-d values (4-15 degreesC) the structural phase was hexagonal wurtzite (W). for intermediate values. a wurtzite and zincblende (ZB) mixture of phases was found, and at high T-d (65 degreesC) only cubic ZB phase was present in the layers. The variation of the bandgap as a result of the structural phase change and quantum confinement is studied. en_US
dc.language.iso en en_US
dc.title Quantum confinement and crystalline structure of CdSe nanocrystalline films en_US
dc.type Article en_US
dc.identifier.idprometeo 2263
dc.source.novolpages 188(3):1059-1064
dc.subject.wos Materials Science, Multidisciplinary
dc.subject.wos Physics, Applied
dc.subject.wos Physics, Condensed Matter
dc.description.index WoS: SCI, SSCI o AHCI
dc.relation.journal Physica Status Solidi A-Applications and Materials Science

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